2SC3133 datasheet(1/1 Pages) ASI

部件名	2SC3133

功能描述	NPN SILICON RF POWER TRANSISTOR

PDF	1 Pages

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 10 mA

25

V

BVCBO

IC = 5.0 mA

60

V

BVEBO

IE = 1.0 mA

5.0

V

ICBO

VCB = 30 V

500

µA

IEBO

VEB = 4.0 V

500

µA

hFE

VCE = 12 V

IC = 10 mA

10

50

180

---

PO

η

C

VCC = 12 V

PIN = 0.5 W

f = 27 MHz

13

60

16

70

dB

%

NPN SILICON RF POWER TRANSISTOR

2SC3133

DESCRIPTION:

The

ASI 2SC3133 is Designed for RF

Power amplifiers in HF band mobile radio

Applications.

MAXIMUM RATINGS

IC

6.0 A

VCE

25 V

VCB

60 V

PDISS

20 W @ TC = 25 °C

TSTG

-65 °C to +150 °C

θ

JC

6.25 °C/W

PACKAGE STYLE TO-220AB (COMMON EMITTER)

1 = BASE

2 = EMITTER

3 = COLLECTOR

TAB = EMITTER

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