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2STF2360 数据表(PDF) 3 Page - STMicroelectronics |
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2STF2360 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 2STD2360, 2STF2360, 2STN2360 Electrical characteristics Doc ID 13309 Rev 5 3/11 2 Electrical characteristics TCASE = 25°C; unless otherwise specified. 2.1 Typical characteristics (curves) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = - 60 V -100 nA IEBO Emitter cut-off current (IC = 0) VEB = - 6 V -100 nA VBE(on) Base-emitter on voltage VCE = - 2 V IC = - 100 mA -630 -650 -730 mV VCE(sat) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter saturation voltage IC = - 2 A IB = - 100 mA IC = - 3 A _ IB = - 150 mA -200 -300 -320 -500 mV mV VBE(sat) (1) Base-emitter saturation voltage IC = - 2 A _ IB = -100 mA -0.9 -1.2 V hFE (1) DC current gain IC = - 100 mA_ VCE = - 2 V IC = - 1 A _ VCE = - 2 V 80 160 400 td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = - 3 A VCC = - 10 V IB(on) = - IB(off) = - 300 mA VBE(off) = 5 V 10 75 250 35 15 100 350 50 ns ns ns ns fT Transition frequency IC = - 0.1 A __ VCE = - 10 V 130 MHz Figure 2. DC current gain (VCE = - 2 V) Figure 3. DC current gain (VCE = - 5 V) |
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