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2STF1550 数据表(PDF) 3 Page - STMicroelectronics |
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2STF1550 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 2STF1550 - 2STN1550 Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 50 V 0.1 μA IEBO Emitter cut-off current (IC = 0) VEB = 4 V 0.1 μA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 μA50 V V(BR)CEO (1) 1. Pulsed duration = 300 μs, duty cycle ≤1.5% Collector-emitter breakdown voltage (IB = 0) IC = 10 mA 50 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 μA5 V hFE (1) DC current gain IC = 0.5 A VCE = 2 V IC = 2 A VCE = 2 V IC = 3 A VCE = 2 V IC = 5 A VCE = 5 V 135 100 250 95 400 VCE(sat) (1) Collector-emitter saturation voltage IC = 3 A IB = 300 mA 0.26 0.45 V VBE(sat) (1) Base-emitter saturation voltage IC = 3 A IB = 300 mA 1 1.2 V CCBO Collector-base capacitance (IE = 0) VCB = 10 V, f = 1 MHz 20 pF ton toff Resistive load Turn-on time Turn-off time IC = 1.5 A VCC = 10 V IB1 = -IB2 = 150 mA 90 700 ns ns |
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