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2STF1550 数据表(PDF) 3 Page - STMicroelectronics

部件名 2STF1550
功能描述  Low voltage high performance NPN power transistors
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STF1550 数据表(HTML) 3 Page - STMicroelectronics

  2STF1550 Datasheet HTML 1Page - STMicroelectronics 2STF1550 Datasheet HTML 2Page - STMicroelectronics 2STF1550 Datasheet HTML 3Page - STMicroelectronics 2STF1550 Datasheet HTML 4Page - STMicroelectronics 2STF1550 Datasheet HTML 5Page - STMicroelectronics 2STF1550 Datasheet HTML 6Page - STMicroelectronics 2STF1550 Datasheet HTML 7Page - STMicroelectronics 2STF1550 Datasheet HTML 8Page - STMicroelectronics  
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2STF1550 - 2STN1550
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 50 V
0.1
μA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
0.1
μA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 μA50
V
V(BR)CEO
(1)
1.
Pulsed duration = 300
μs, duty cycle ≤1.5%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA
50
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100 μA5
V
hFE
(1)
DC current gain
IC = 0.5 A
VCE = 2 V
IC = 2 A
VCE = 2 V
IC = 3 A
VCE = 2 V
IC = 5 A
VCE = 5 V
135
100
250
95
400
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 3 A
IB = 300 mA
0.26
0.45
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 3 A
IB = 300 mA
1
1.2
V
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V, f = 1 MHz
20
pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 1.5 A
VCC = 10 V
IB1 = -IB2 = 150 mA
90
700
ns
ns



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