BTA40 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

BTA40, BTA41, BTB41

Characteristics

Doc ID 7469 Rev 8

3/9

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 60 A

tp = 380 µs

Tj = 25 °C

MAX.

1.55

Vt0

(2)

Threshold voltage

Tj = 125 °C

MAX.

0.85

(2)

Dynamic resistance

Tj = 125 °C

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

5µA

Tj = 125 °C

Minimum IGT is guaranted at 5% of IGT max.

for both polarities of A2 referenced to A1

Table 5.

Thermal resistance

Symbol

Test conditions

Value

Unit

Rth(j-c)

Junction to case (AC)

RD91 (insulated) / TOP3 insulated

0.9

°C/W

TOP3

0.6

Rth(j-a)

Junction to ambient

TOP3 / TOP3 insulated

°C/W

Figure 1.

Maximum power dissipation versus

on-state rms current (full cycle)

Figure 2.

On-state rms current versus case

temperature (full cycle)

P(W)

(A)

T(RMS)

180°

(A)

T(RMS)

100

125

α=180°

BTA40

BTA41

BTB41

T (°C)

Figure 3.

Relative variation of thermal

impedance versus pulse duration

Figure 4.

On-state characteristics (maximum

values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E-03

1.E-02

1.E-01

1.E+00

K=[Z /R

th]

t (s)

BTA / BTB41

th(j-a)

Zth(j-c)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

400

(A)

(V)

T = 25°C

T max.

V = 0.85V

R = 10 m

T max.

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