T1635 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

BTA16, BTB16, T1610, T1635

Characteristics

Doc ID 7471 Rev 9

3/10

Table 4.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

standard (4 quadrants)

Symbol

Test conditions

Quadrant

BTA16 / BTB16

Unit

IGT

(1)

Minimum IGT is guaranted at 5% of IGT max

VD = 12 V

RL = 33 Ω

I - II - III

Max.

100

VGT

ALL

Max.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 125 °C

ALL

Min.

0.2

(2)

For both polarities of A2 referenced to A1

IT = 500 mA

Max.

IG = 1.2 IGT

I - III - IV

Max.

120

dV/dt (2) VD = 67 %VDRM gate open

Tj = 125 °C

Min.

200

400

V/µs

(dV/dt)c

(2)

(dI/dt)c = 7 A/ms

Tj = 125 °C

Min.

V/µs

Table 5.

Static characteristics

Symbol

Test conditions

Value

Unit

VT (2)

ITM = 22.5 A

tp = 380 µs

Tj = 25 °C

Max.

1.55

Vto (2)

Threshold voltage

Tj = 125 °C

Max.

0.85

Rd (2)

Dynamic resistance

Tj = 125 °C

Max.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

Max.

5µA

Tj = 125 °C

Table 6.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

D2PAK / TO-220AB

1.2

°C/W

TO-220AB insulated

2.1

Rth(j-a)

Junction to ambient

S(1) = 1 cm²

S = Copper surface under tab

D2PAK

°C/W

TO-220AB / TO-220AB

insulated

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