MJD44H11 datasheet(3/8 Pages) STMICROELECTRONICS

部件名	MJD44H11

功能描述	Complementary power transistors

PDF	8 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 8 page

MJD44H11, MJD45H11

Electrical characteristics

Doc ID 5470 Rev 3

3/8

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Note:

For PNP types voltage and current values are negative.

2.1

Typical characteristic (curves)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

ICES

Collector cut-off current

(VBE = 0)

VCE = 80 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

µA

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 8 A

IB = 0.4 A

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 8 A

IB = 0.8 A

1.5

hFE

(1)

DC current gain

IC = 2 A_

VCE = 1 V

IC = 4 A_ _

VCE = 1 V

Figure 2.

Safe operating area

Figure 3.

Derating curves

MJD44H11 数据表(PDF) 3 Page - STMicroelectronics

MJD44H11 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

MJD44H11 数据表(PDF) 3 Page - STMicroelectronics

MJD44H11 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载