April 2009

Doc ID 14005 Rev 2

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PD20015-E

PD20015S-E

RF power transistor, LdmoST family

Features

directive

Description

The PD20015-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD20015-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD20015-E’s superior linearity performance

makes it an ideal solution for mobile radio

applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/ (look for application note AN1294)

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Package

Packing

PD20015-E

PowerSO-10RF (formed lead)

Tube

PD20015S-E

PowerSO-10RF (straight lead)

PD20015TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD20015STR-E

PowerSO-10RF (straight lead)

www.st.com