START499D datasheet(1/18 Pages) STMICROELECTRONICS

部件名	START499D

功能描述	NPN RF silicon transistor

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 18 page

June 2010

Doc ID 14496 Rev 4

1/18

18

START499D

NPN RF silicon transistor

Features

■ High efficiency

■ Common emitter configuration

■ Broadband performances POUT = 29 dBm with

14 dB gain @ 900 MHz

■ Plastic package

■ Linear and non linear operation

■ Supplied in tape and reel

■ In compliance with the 2002/95/EC european

directive

Description

The START499D provide the market with a Si

state-of-art RF process. Manufactured with ST 3rd

generation bipolar process, it offers the highest

power, gain and efficiency in SOT-89 for given

breakdown voltage (BVCEo). START499D is

suitable for a wide range of application up to 1

GHz.

Figure 1.

Pin connection

SOT-89

Emitter

Base

Emitter

Collector

Table 1.

Device summary

Order code

Marking

Package

Packaging

START499D

D499

SOT-89

Tape and reel

www.st.com

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