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STB45NF06 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB45NF06
功能描述  N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB45NF06 数据表(HTML) 3 Page - STMicroelectronics

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STB45NF06, STP45NF06
Electrical ratings
Doc ID 7433 Rev 5
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
38
A
ID
Drain current (continuous) at TC = 100°C
26
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
152
A
PTOT
Total dissipation at TC = 25°C
80
W
Derating factor
0.53
W/°C
dv/dt(2)
2.
ISD ≤38A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
8
V/ns
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
Rthj-case Thermal resistance junction-case max
1.87
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
Rthj-pcb
(1)
1.
When mounted on 1 inch2 FR-4 2 oz Cu board.
Thermal resistance junction - pcb max
35
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
19
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=40 V)
260
mJ



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