STB60NF10 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STB60NF10

功能描述	N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™II Power MOSFET

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

STB60NF10 - STB60NF10 -1 - STP60NF10

Electrical ratings

3/15

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

VGS

Gate-source voltage

± 20

(1)

Current limited by package

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25°C

300

Derating factor

W/°C

dv/dt (3)

ISD ≤80A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting TJ = 25

oC, I

D = 40A, VDD = 30V

Single pulse avalanche energy

485

Tstg

Storage temperature

-55 to 175

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.5

°C/W

RthJA

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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