STB80PF55, STP80PF55

Electrical ratings

Doc ID 8177 Rev 6

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1

Electrical ratings

Note:

For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

55

V

Gate-source voltage

±16

V

(1)

1.

Current limited by package.

80

A

57

A

(2)

2.

Pulse width limited by safe operating area .

Drain current (pulsed)

320

A

300

W

Derating factor

2

W/°C

3.

Peak diode recovery voltage slope

7

V/ns

(4)

4.

Single pulse avalanche energy

1.4

J

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

0.5

°C/W

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C