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STF6N52K3 数据表(PDF) 1 Page - STMicroelectronics |
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STF6N52K3 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2008 Rev 1 1/12 12 STD6N52K3 STF6N52K3 N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected Application ■ Switching applications Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID Pw STD6N52K3 525 V < 1.2 Ω 5 A 70 W STF6N52K3 525 V < 1.2 Ω 5 A(1) 1. Limited by package 25 W 1 3 DPAK TO-220FP 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STD6N52K3 6N52K3 DPAK Tape and reel STF6N52K3 6N52K3 TO-220FP Tube www.st.com |
类似零件编号 - STF6N52K3 |
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类似说明 - STF6N52K3 |
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