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STF24NF12 数据表(PDF) 4 Page - STMicroelectronics

部件名 STF24NF12
功能描述  N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET??II MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF24NF12 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF24NF12
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
120
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 12A
0.070
0.077
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15V, ID = 15A
10
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
870
125
50
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=80V, ID = 24A
VGS =10V
(see Figure 13)
30
6
10
72
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50V, ID = 12A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
60
45
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 50V, ID = 12A,
RG =4.7Ω, VGS =10V
(see Figure 12)
50
20
ns
ns



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