Characteristics

STPS10L60C

2/8

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation:

2

(RMS)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

RMS forward current

30

A

Average forward

current

TO220FPAB

δ = 0.5

Per diode

Per device

5

10

A

Surge non repetitive forward current

tp = 10 ms Sinusoidal

180

A

Repetitive peak reverse current

tp = 2 µs square F=1 kHz

1

A

Repetitive peak avalanche power

4000

W

Storage temperature range

-65 to +

175

° C

1.

thermal runaway condition for a diode on its own heatsink

150

° C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

Table 1.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

TO-220FPAB

Per diode

Total

4.5

3.5

° C/W

Coupling

2.5

° C/W

Table 2.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test : tp = 380 µs,

δ < 2%

Reverse leakage current

220

45

60

mA

(1)

Forward voltage drop

0.55

V

0.43

0.52

0.67

0.55

0.64

dPtot

dTj

---------------

1

Rth j

a

–

()

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