STPS10L60CG datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STPS10L60C

4/8

Figure 7.

Relative variation of thermal

transient impedance junction to

case versus pulse duration

(D2PAK)

Figure 8.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

3E+2

I (mA)

V (V)

T =125°C

T =150°C

T =75°C

T =100°C

T =50°C

T =25°C

Figure 9.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab (Epoxy printed circuit

board FR4, copper thickness:

35 µm) ( D2PAK)

100

200

500

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.1

1.0

10.0

100.0

(A)

(V)

T =125°C

T =150°C

(typical values)

T =25°C

(°C/W)

th(j-a)

S(Cu)(cm²)

STPS10L60CG 数据表(PDF) 4 Page - STMicroelectronics

STPS10L60CG 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

STPS10L60CG 数据表(PDF) 4 Page - STMicroelectronics

STPS10L60CG 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载