STPS40L40CT datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS40L40CT/CW

3/5

1E-3

1E-2

1E-1

1E+0

100

125

150

175

200

225

250

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

t(s)

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

IR(mA)

Tj=125°C

Tj=75°C

Tj=25°C

Tj=150°C

VR(V)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

200

IFM(A)

Typical values

Tj=150°C

Tj=125°C

Tj=75°C

Tj=25°C

VFM(V)

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

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