STPS41L60CG datasheet(3/8 Pages) STMICROELECTRONICS

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STPS41L60C

Characteristics

3/8

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

I (A)

100

125

150

175

200

225

250

1.E-03

1.E-02

1.E-01

1.E+00

Tc=25 °C

Tc=75 °C

Tc=125 °C

I M

δ =0.5

t(s)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

δ=tp/T

t (s)

Figure 7.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 8.

Junction capacitance versus

reverse voltage applied

(typical values)

I (mA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

V (V)

C(nF)

0.1

1.0

10.0

100

F=1 MHz

OSC= 30 mV

Tj=25 °C

V (V)

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