Characteristics

STPS3030CT/CG/CR

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1

Characteristics

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

30

V

RMS forward current

30

A

Average forward current

15

A

δ = 0.5

Per device

30

250

A

Peak repetitive reverse current

1

A

Non repetitive peak reverse current

3

A

Repetitive peak avalanche power

4100

W

Storage temperature range

-65 to + 150

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

dV/dt

10000

V/µs

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Per diode

1.2

°C/W

Total

0.8

Coupling

0.4

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation:

2

(RMS)

Reverse leakage current

0.23

1.0

mA

125

180

VF

(1)

Forward voltage drop

0.44

0.49

V

0.36

0.40

0.53

0.58

0.49

0.53

dPtot

dTj

---------------

1

Rth j

a

–

()

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