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STPS4045CT 数据表(PDF) 3 Page - STMicroelectronics |
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STPS4045CT 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() STPS4045C Characteristics Doc ID 4605 Rev 5 3/8 To evaluate the conduction losses use the following equation : P = 0.43x IF(AV) + 0.01x IF 2 (RMS) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -- 200 µA Tj = 125 °C - 11 40 mA VF (1) Forward voltage drop Tj = 25 °C IF = 20 A - - 0.76 V Tj = 125 °C - 0.56 0.63 Tj = 25 °C IF = 40 A - - 0.94 Tj = 125 °C - 0.7 0.83 1. Pulse test : tp = 380 µs, δ < 2% Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 0.5 per diode) PF(av)(W) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 T δ=tp/T tp IF(av) (A) IF(av)(A) 0 2 4 6 8 10 12 14 16 18 20 22 24 0 25 50 75 100 125 150 175 T δ=tp/T tp R th(j-a)=Rth(j-c) -247 TO -247 TO-220AB TO-220AB Tamb(°C) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(tp) P (1 µs) ARM ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(Tj) P (25 °C) ARM ARM |
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