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STPS30120CT 数据表(PDF) 3 Page - STMicroelectronics |
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STPS30120CT 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() STPS30120C Characteristics Doc ID 11213 Rev 3 3/8 Table 4. Static electrical characteristics (per diode) Symbol Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test : tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 15 µA Tj = 125 °C 2.5 7.5 mA VF (2) 2. Pulse test : tp = 380 μs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.59 x IF(AV) + 0.01 IF 2 (RMS) Forward voltage drop Tj = 25 °C IF = 5 A 0.74 V Tj = 125 °C 0.57 0.61 Tj = 25 °C IF = 15 A 0.92 Tj = 125 °C 0.7 0.74 Tj = 25 °C IF = 30 A 1.02 Tj = 125 °C 0.83 0.89 Figure 2. Average forward power dissipation versus average forward current (per diode) Figure 3. Average forward current versus ambient temperature ( δ = 0.5, per diode) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 2 4 6 8 10 12 14 16 18 P (W) F(AV) T δ=tp/T tp δ = 1 δ = 0.05 I (A) F(AV) δ = 0.5 δ = 0.2 δ = 0.1 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 I (A) F(AV) T δ=tp/T tp T (°C) amb R =15°C/W th(j-a) R=R th(j-a) th(j-c) Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 P(tp) P (1µs) ARM ARM t (µs) p 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j |
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