STPS30170C

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Table 3: Absolute Ratings (limiting values, per diode)

Table 4: Thermal Parameters

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

** tp = 380 µs,

To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF

2

(RMS)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

170

V

30

A

Average forward current

δ = 0.5

TO-220FPAB

Tc = 120 °C

Per diode

Per device

15

A

TO-220AB /

Tc = 155 °C

TO-247

30

Surge non repetitive forward current

tp = 10ms sinusoidal

220

A

Repetitive peak avalanche power

tp = 1µs Tj = 25 °C

10500

W

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

thermal runaway condition for a diode on its own heatsink

Symbol

Parameter

Value

Unit

Junction to case

TO-220FPAB

Per diode

Total

4

3.3

°C/W

Per diode

Total

1.6

0.85

TO-247

Per diode

Total

1.5

0.8

TO-220FPAB

Coupling

2.6

°C/W

Coupling

0.3

TO-247

Coupling

0.3

When the diodes 1 and 2 are used simultaneously:

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

Reverse leakage current

20

µA

520

mA

Forward voltage drop

0.92

V

0.69

0.75

1

0.80

0.86

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

>