STPS30170CFP datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STPS30170C

3/9

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus

ambient temperature (

δ = 0.5, per diode)

Figure

Normalized

avalanche

power

derating versus pulse duration

Figure

Normalized

avalanche

power

derating versus junction temperature

Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode) (TO-220AB, TO-247, D2PAK)

Figure 6: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode) (TO-220FPAB)

012

345678

10 11 12 13 14 15 16 17 18

F(AV)(W)

d=0.05

d=0.1

d=0.2

d=0.5

d=1

d=t /T

IF(AV)(A)

100

125

150

175

F(AV)(A)

(j-A)=15 °C/W

d=t /T

th(j-a)=Rth(j-c) (TO-220AB, TO -247 & D²PAK)

th(j-a)=Rth(j-c)

(TO-220FPAB)

th(j-a)=Rth(j-c)

(TO-220FPAB)

Tamb(°C)

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

100

125

150

175

200

225

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

d =0.5

TO-220AB, TO -247 & D²PAK

t(s)

100

110

120

130

140

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

d =0.5

TO-220FPAB

t(s)

STPS30170CFP 数据表(PDF) 3 Page - STMicroelectronics

STPS30170CFP 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载