STS5N15M3 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STS5N15M3

功能描述	N-channel 150 V, 45 m廓, 5 A, SO-8 ultra low gate charge MDmesh??III Power MOSFET

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 12 page

June 2008

Rev 2

1/12

12

STS5N15M3

N-channel 150 V, 45 m

Ω, 5 A, SO-8

ultra low gate charge MDmesh™ III Power MOSFET

Features

■ Low on-resistance

■ Low input capacitance and gate charge

■ Low gate input resistance

■ High dv/dt avalanche capabilities

Application

■ Switching applications

Description

This device is realized with the third generation of

MDmesh™ technology. This Power MOSFET

associates an improved vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS5N15M3

150 V

< 0.057

Ω

5 A

SO-8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS5N15M3

5R15-

SO-8

Tape and reel

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

类似零件编号 - STS5N15M3

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STS5N15M3	966Kb / 9P	N-Channel 150 V (D-S) MOSFET

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