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STT13005 数据表(PDF) 3 Page - STMicroelectronics |
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STT13005 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STT13005 Electrical characteristics Doc ID 13613 Rev 3 3/10 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 700 V VCE = 700 V TC = 125 °C 100 500 µA µA ICEO Collector cut-off current (IB = 0) VCE = 400 V 250 µA VEBO Emitter-base voltage (IC = 0) IE = 10 mA 9 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.5 A IB = 125 mA IC = 0.8 A _ IB = 0.2 A IC = 1.6 A _ IB = 0.4 A 0.5 1 1.5 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.5 A IB = 125 mA IC = 0.8 A _ IB = 0.2 A IC = 1.6 A _ IB = 0.4 A 1 1.3 1.5 V V V hFE (1) DC current gain IC = 0.5 A _ VCE = 5 V IC = 2 A _ _ VCE = 5 V 10 8 50 tr ts tf Resistive load Rise time Storage time Fall time IC = 1 A VCC= 125 V IB1 = -IB2 = 0.2 A 0.4 3.2 0.25 0.7 4.5 0.4 µs µs µs ts tf Inductive load Storage time Fall time IC = 1 A IB1 = 0.2 A VBE(off) = -5 V L = 50 mH VClamp = 300 V 0.8 0.16 µs µs |
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