STTH108_09 datasheet(2/6 Pages) STMICROELECTRONICS

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Characteristics

STTH108

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Doc ID 9342 Rev 3

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.05 x IF(AV) + 0.20 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

800

V(RMS)

Voltage rms

560

IF(AV)

Average forward current

SMA

TL = 110 °C δ = 0.5

DO-41

TL = 130 °C δ = 0.5

IFSM

Forward Surge current

t = 8.3 ms

SMA

DO-41

Tstg

Storage temperature range

-50 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

Lead length = 10 mm

DO-41

Rth(j-a)

Junction to ambient

Lead length = 10 mm

DO-41

110

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

Reverse leakage

current

Tj = 25 °C

VR = 800 V

µA

Tj = 125 °C

Forward voltage drop

Tj = 25 °C

IF = 1 A

1.65

Tj = 125 °C

0.89

1.25

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse

recovery time

Tj = 25 °C

IF = 0.5 A,

Irr = 0.25 A

IR = 1 A

tfr

Forward

recovery time

Tj = 25 °C

IF = 1 A,

dIF/dt = 50 A/ms

VFR = 1.1 x VFmax

200

VFP

Forward

recovery voltage

Tj = 25 °C

IF = 1 A,

dIF/dt = 50 A/ms

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