STTH1302CT/CG/CFP

4/7

0

10

20

30

40

50

60

70

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

T =25°C

C

T =75°C

C

T =125°C

C

I (A)

M

t

δ=0.5

Fig. 5-2: Non repetitive surge peak forward current

versus

overload

duration

per

diode

(TO-220FPAB).

0

10

20

30

40

50

60

70

80

10

100

1000

trr(ns)

Tj=25°C

T =125°C

j

I =6.5A

V =100V

F

R

dI /dt(A/µs)

F

confidence, per diode).

10

100

1

10

100

1000

V (V)

R

F=1MHz

V

=30V

Tj=25°C

OSC

RMS

C(nF)

Fig. 7:

Junction capacitance versus reverse

voltage applied (typical values, per diode).

0

1

2

3

4

5

6

7

8

0

25

50

75

100

125

150

175

T

(°C)

amb

Rth

=Rth

(j-a)

(j-c)

D²PAK (S=1cm²)

Rth

=50°C/W

(j-a)

TO-220AB/D²PAK

TO-220FPAB

I

(A)

F(AV)

Fig. 6: Average forward current versus ambient tem-

perature (

δ=0.5, per diode).

0

20

40

60

80

100

120

140

160

180

200

220

240

10

100

1000

dI /dt(A/µs)

F

Q

(nC)

RR

I =6.5A

V =200V

F

R

T =125°C

j

Tj=25°C

(90% confidence, per diode).

0

2

4

6

8

10

12

10

100

1000

I

(A)

RM

Tj=25°C

T =125°C

j

I =6.5A

V =100V

F

R

dI /dt(A/µs)

F

(90% confidence, per diode).