STW3040 datasheet(3/10 Pages) STMICROELECTRONICS

部件名	STW3040

功能描述	High voltage fast-switching NPN power transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 10 page

STW3040

Electrical characteristics

3/10

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 700 V

1mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 9 V

1mA

V(BR)CEO

Collector-emitter

breakdown (IB = 0)

IC = 10 mA

400

VCE(sat)

(1)

Pulse duration = 300 ms, duty cycle

≤1.5 %

Collector-emitter

saturation voltage

IC = 6 A __

IB = 1.2 A

IC = 20 A _

IB = 4 A

0.1

0.4

0.8

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 6 A__

IB = 1.2 A

IC = 20 A _

IB = 4 A

1.2

1.5

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 6 A ___ _ VCE = 5 V

IC = 20 A

VCE = 5 V

ton

Resistive load

Turn-on time

Storage time

Fall time

IC = 20 A

VCC = 200 V

Ib(on) = 4 A

Ib(off) = -8 A

0.5

2.5

0.3

µs

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