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THDT6511D 数据表(PDF) 2 Page - STMicroelectronics |
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THDT6511D 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Obsolete Product(s) - Obsolete Product(s) THDT6511D 2/6 Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 5/310 µs 2/10 µs 40 50 125 A ITSM Non repetitive surge peak on-state current F=50Hz t = 300 ms t=1s t=5s 10 3.5 1 A ITSM F=50Hz, 60x1s,2mn between pulse 1A Tstg Tj Storage temperature range Maximum junction temperature -55to+150 150 °C TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Note 1 : Pulse waveform : 10/1000 µst r=10µstp=1000µs 5/310 µst r=5µstp=310µs 2/10 µst r=2µstp=10µs 100 50 %I PP t t r p 0 t Symbol Parameter Value Unit Rth (j-a) Junction to ambient 170 °C/W THERMAL RESISTANCES I IF VBO VRM IRM VF V Ipp IH IBO VBR Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current VF Forward voltage drop VFP Peak forward voltage IBO Breakover current IPP Peak pulse current C Capacitance αT Temperature coefficient ELECTRICAL CHARACTERISTICS (Tamb = 25°C) |
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