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TYN1008 数据表(PDF) 2 Page - STMicroelectronics

部件名 TYN1008
功能描述  Sensitive and standard 8 A SCRs
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TYN1008 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
TN805, TN815, TS820, TYN608, TYN808, TYN1008
2/12
Doc ID 7476 Rev 6
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
TN805
TN815
TS820
TYNx08
IT(RMS)
On-state rms current (180° conduction angle)
Tc = 110 °C
8
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 110 °C
5
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25 °C
73
100
A
tp = 10 ms
70
95
I2tI2t value for fusing
tp = 10 ms
Tj = 25 °C
24.5
45
A2S
dI/dt
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage (for TN8xx and TYNx08 only)
5
V
Table 3.
Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TS820
Unit
IGT
VD = 12 V, RL = 140 Ω
MAX.
200
µA
VGT
MAX.
0.8
V
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω
Tj = 125 °C
MIN.
0.1
V
VRG
IRG = 10 µA
MIN.
8
V
IH
IT = 50 mA, RGK = 1 kΩ
MAX.
5
mA
IL
IG = 1 mA ,, RGK = 1 kΩ
MAX.
6
mA
dV/dt
VD = 65% VDRM, RGK = 220 Ω
Tj = 125 °C
MIN.
5
V/µs
VTM
ITM = 16 A, tp = 380 µs
Tj = 25 °C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
46
m
Ω
IDRM
IRRM
VDRM = VRRM, RGK = 220 Ω
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
1
mA



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