IRFF310

N-Channel MOSFET.

V

I

R

Ω

Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

Parameter

Min.

Typ.

Max.

Units

V

DSS

Drain – Source Breakdown Voltage

400

V

I

D

Continuous Drain Current

1.25

A

P

D

Power Dissipation

15

W

R

DS(ON)

Static Drain – Source On–State Resistance

3.6

Ω

C

ISS

Input Capacitance

170

pF

Q

g

Total Gate Charge

8.4

nC

t

td(on)

Turn–On Delay Time

15

ns

t

tr

Rise Time

20

ns

t

td(off)

Turn–Off Delay Time

35

ns

t

f

Fall Time

30

ns

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Generated

11-Oct-02

TO39 (TO205AF)

PINOUTS

1 – Source

2 – Gate

3 - Drain

N-Channel MOSFET

in a

Hermetically sealed TO39

Metal Package.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Dimensions in mm (inches).

0.89

(0.035)

max.

12.70

(0.500)

min.

4.06 (0.16)

4.57 (0.18)

8.64 (0.34)

9.40 (0.37)

8.01 (0.315)

9.01 (0.355)

0.41 (0.016)

0.53 (0.021)

dia.

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

2.54

(0.100)

5.08 (0.200)

typ.

45°

1

2

3