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AP2145 数据表(PDF) 3 Page - Diodes Incorporated |
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AP2145 数据表(HTML) 3 Page - Diodes Incorporated |
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3 / 13 page ![]() AP2145/AP2155 0.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE AP2145/AP2155 Document number: DS32031 Rev. 2 - 2 3 of 13 www.diodes.com September 2010 © Diodes Incorporated Recommended Operating Conditions Symbol Parameter Min Max Unit VIN Input voltage 2.7 5.5 V IOUT Output Current 0 500 mA TA Operating Ambient Temperature -40 85 °C Electrical Characteristics (TA = 25 oC, VIN = +5.0V, unless otherwise stated) Symbol Parameter Test Conditions Min Typ. Max Unit VUVLO Input UVLO Rload=1kΩ 1.6 1.9 2.5 V ISHDN Input Shutdown Current Disabled, OUT = open 0.5 1 μA IQ Input Quiescent Current Enabled, OUT = open 45 70 μA ILEAK Input Leakage Current Disabled, OUT grounded -1 1 μA IREV Reverse Leakage Current Disabled, VIN= 0V, VOUT= 5V, IREV at VIN 1 μA RDS(ON) Switch on-resistance VIN = 5V, IOUT= 0.5A, - 40 oC≤ T A ≤85 oC MSO-8-EP 90 140 m Ω SO-8 95 140 m Ω VIN = 3.3V, IOUT= 0.5A, -40 oC≤ T A ≤85 oC 120 160 m Ω ISHORT Short-Circuit Current Limit Enabled into short circuit, CIN=10μF, CL=100μF 0.7 A ILIMIT Over-Load Current Limit VIN= 5V, VOUT= 4.5V, CIN=10μF, CL=100μF, - 40 oC≤ T A ≤85 oC 0.6 0.8 1.0 A ITrig Current limiting trigger threshold Output Current Slew rate (<100A/s), CIN=10μF, CL=22μF 1.0 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (short applied to output), CL=100μF 10 μs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input leakage VEN = 5V 1 μA IO-LEAK Output Leakage Current Disabled 1 μA TD(ON) Output turn-on delay time CL=1μF, Rload=10Ω 0.05 ms TR Output turn-on rise time CL=1μF, Rload=10Ω 0.6 1.5 ms TD(OFF) Output turn-off delay time CL=1μF, Rload=10Ω 0.01 ms TF Output turn-off fall time CL=1μF, Rload=10Ω 0.05 0.1 ms RFLG FLG output FET on-resistance VIN = 3.3V or 5V, CIN=10μF, IFLG =10mA 20 40 Ω IFLG FLG Leakage Current VFLG = 5V 1 μA TBlank FLG blanking time VIN = 3.3V or 5V, CIN=10μF, CL=100μF 4 7 15 ms TSHDN Thermal Shutdown Threshold Enabled, Rload=1kΩ 135 °C THYS Thermal Shutdown Hysteresis 25 °C θ JA Thermal Resistance Junction- to-Ambient SO-8 (Note 3) 110 oC/W MSO-8-EP (Note 4) 60 oC/W Notes: 3. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout. 4. Test condition for MSO-8-EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. |
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