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2SA1953 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SA1953 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SA1953 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −15 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA DC current gain hFE (Note) VCE = −2 V, IC = −10 mA 300 ⎯ 1000 VCE (sat) (1) IC = −10 mA, IB = −0.5 mA ⎯ −15 −30 Collector-emitter saturation voltage VCE (sat) (2) IC = −200 mA, IB = −10 mA ⎯ −110 −250 mV Base-emitter saturation voltage VBE (sat) IC = −200 mA, IB = −10 mA ⎯ −0.87 −1.2 V Transition frequency fT VCE = −2 V, IC = −10 mA 80 130 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4.2 pF Collector-emitter on resistance Ron IB = −1 mA, Vin = −1 Vrms, f = 1 kHz ⎯ 0.9 ⎯ Ω Turn-on time ton ⎯ 40 ⎯ Storage time tstg ⎯ 280 ⎯ Switching time Fall time tf IB1 = −IB2 = −5 mA ⎯ 45 ⎯ ns Note: hFE classification A: 300~600, B: 500~1000 |
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