2SC3113 datasheet(1/4 Pages) TOSHIBA

部件名	2SC3113

功能描述	For Audio Amplifier and Switching Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2SC3113

2003-03-25

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC3113

For Audio Amplifier and Switching Applications

· High DC current gain: hFE = 600~3600

· High breakdown voltage: VCEO = 50 V

· High collector current: IC = 150 mA (max)

· Small package

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

150

mA

Base current

IB

30

mA

Collector power dissipation

PC

200

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55~125

°C

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

¾

0.1

mA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

¾

0.1

mA

DC current gain

hFE

(Note)

VCE = 6 V, IC = 2 mA

600

¾

3600

Collector-emitter saturation voltage

VCE (sat)

IC = 100 mA, IB = 10 mA

¾

0.12

0.25

V

Transition frequency

fT

VCE = 10 V, IC = 10 mA

100

250

¾

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

¾

3.5

¾

pF

NF (1)

VCE = 6 V, IC = 0.1 mA, f = 100 Hz,

RG = 10 kW

¾

0.5

¾

Noise figure

NF (2)

VCE = 6 V, IC = 0.1 mA, f = 1 kHz,

RG = 10 kW

¾

0.3

¾

dB

Note: hFE classification A: 600~1800, B: 1200~3600

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)

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