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2SC3333 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SC3333 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() 2SC3333 2003-03-25 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Color TV Chroma Output Applications · High voltage: VCEO = 250 V · Low Cre: 1.8 pF (max) · Complementary to 2SA1320 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitter voltage VCEO 250 V Emitter-base voltage VEBO 5 V DC IC 50 Collector current Pulsed ICP 100 mA Base current IB 20 mA Collector power dissipation PC 0.6 W Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 250 ¾ ¾ V DC current gain hFE VCE = 20 V, IC = 25 mA 50 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ¾ ¾ 1.5 V Base-emitter voltage VBE VCE = 20 V, IC = 25 mA ¾ 0.75 ¾ V Transition frequency fT VCE = 10 V, IC = 10 mA 60 100 ¾ MHz Reverse transfer capacitance Cre VCB = 30 V, IE = 0, f = 1 MHz ¾ ¾ 1.8 pF Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
类似零件编号 - 2SC3333 |
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类似说明 - 2SC3333 |
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