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AP2181D 数据表(PDF) 4 Page - Diodes Incorporated

部件名 AP2181D
功能描述  1.5A SINGLE CHANNEL CURRENT-LIMITED POWER
PDF  17 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

AP2181D 数据表(HTML) 4 Page - Diodes Incorporated

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AP2181D/AP2191D
1.5A SINGLE CHANNEL CURRENT-LIMITED POWER
SWITCH WITH OUTPUT DISCHARGE
AP2181D/2191D
Document number: DS32251 Rev. 2 - 2
4 of 17
www.diodes.com
September 2010
© Diodes Incorporated
Electrical Characteristics (TA = 25
oC, VIN = +5.0V, unless otherwise stated)
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Unit
VUVLO
Input UVLO
1.6
1.9
2.5
V
ISHDN
Input Shutdown Current
Disabled, IOUT= 0
0.5
1
μA
IQ
Input Quiescent Current
Enabled, IOUT= 0
45
70
μA
ILEAK
Input Leakage Current
Disabled, OUT grounded
0.1
1
μA
IREV
Reverse Leakage Current
Disabled, VIN= 0V, VOUT= 5V, IREV at VIN
0.1
1
μA
RDS(ON)
Switch on-resistance
VIN = 5V,
IOUT= 1.5A
TA = 25°C
SOT25, MSOP-8,
MSOP-8-EP, SO-8
95
115
m
DFN2018-6
90
110
-40
°C ≤ T
A ≤ 85°C
140
VIN = 3.3V,
IOUT= 1.5A
TA = 25°C
120
140
-40
°C ≤ T
A ≤ 85°C
170
ISHORT
Short-Circuit Current Limit
Enabled into short circuit, CL=120μF
2.0
A
ILIMIT
Over-Load Current Limit
VIN= 5V, VOUT= 4V, CL=120μF, -40°C ≤ TA ≤85°C
1.6
2.1
2.6
A
ITrig
Current limiting trigger threshold Output Current Slew rate (<100A/s) , CL=120μF
2.6
A
VIL
EN Input Logic Low Voltage
VIN = 2.7V to 5.5V
0.8
V
VIH
EN Input Logic High Voltage
VIN = 2.7V to 5.5V
2
V
ISINK
EN Input leakage
VEN = 5V
1
μA
TD(ON)
Output turn-on delay time
CL=1μF, Rload=10Ω
0.05
ms
TR
Output turn-on rise time
CL=1μF, Rload=10Ω
0.6
1.5
ms
TD(OFF)
Output turn-off delay time
CL=1μF, Rload=10Ω
0.05
ms
TF
Output turn-off fall time
CL=1μF, Rload=10Ω
0.05
0.1
ms
RFLG
FLG output FET on-resistance
IFLG =10mA
20
40
TBlank
FLG blanking time
CIN=10uF, CL=22μF
4
7
15
ms
TDIS
Discharge time
CL= 1μF, VIN = 5V, disabled to VOUT < 0.5V
0.6
ms
RDIS
Discharge resistance (Note 3)
VIN = 5V, disabled, IOUT= 1mA
100
TSHDN
Thermal Shutdown Threshold
Enabled, Rload=1kΩ
140
°C
THYS
Thermal Shutdown Hysteresis
25
°C
θJA
Thermal Resistance Junction-to-
Ambient
SOT25 (Note 4)
170
oC/W
SO-8 (Note 4)
127
MSOP-8 (Note 4)
118
MSOP-8-EP (Note 5)
67
DFN2018-6 (Note 5)
70
Notes:
3. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
4. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.



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