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2SC4409 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SC4409
功能描述  Power Amplifier Applications Power switching applications
PDF  4 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC4409 数据表(HTML) 1 Page - Toshiba Semiconductor

  2SC4409 Datasheet HTML 1Page - Toshiba Semiconductor 2SC4409 Datasheet HTML 2Page - Toshiba Semiconductor 2SC4409 Datasheet HTML 3Page - Toshiba Semiconductor 2SC4409 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC4409
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A)
• High speed switching time: tstg = 500ns (typ.)
• Small flat package
• PC = 1~2 W (Mounted on a ceramic substrate)
• Complementary to 2SA1681
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.2
A
Collector power dissipation
PC
500
mW
Collector power dissipation
PC (Note)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: 2SC4409 mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)


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