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STM8L151C4U6 数据表(PDF) 82 Page - STMicroelectronics |
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STM8L151C4U6 数据表(HTML) 82 Page - STMicroelectronics |
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82 / 122 page  Electrical parameters STM8L151xx, STM8L152xx 82/122 Doc ID 15962 Rev 5 Internal clock sources Subject to general operating conditions for VDD, and TA. High speed internal RC oscillator (HSI) Figure 19. Typical HSI frequency vs VDD Table 32. HSI oscillator characteristics Symbol Parameter (1) Conditions(1) Min Typ Max Unit fHSI Frequency VDD = 3.0 V 16 MHz ACCHSI Accuracy of HSI oscillator (factory calibrated) VDD = 3.0 V, TA = 25 °C -1 (2) 1 (2) % VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C -1.5 (2) 1.5 (2) % VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C -2 (2) 2 (2) % VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C -2.5 (2) 2(2) % VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C -4.5 (2) 2 (2) % 1.65 V ≤VDD ≤ 3.6 V, -40 °C ≤TA ≤ 125 °C -4.5 3 % TRIM HSI user trim resolution 1.65 V ≤VDD ≤ 3.6 V, -40 °C ≤TA ≤ 125 °C ±0.4 (2) ±0.5(2) % tsu(HSI) HSI oscillator setup time (wakeup time) 3.7 7.4 (2) µs IDD(HSI) HSI oscillator power consumption 100 140 (2) µA 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. |
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