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DDTC122LE 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DDTC122LE
功能描述  NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DDTC122LE 数据表(HTML) 2 Page - Diodes Incorporated

  DDTC122LE Datasheet HTML 1Page - Diodes Incorporated DDTC122LE Datasheet HTML 2Page - Diodes Incorporated DDTC122LE Datasheet HTML 3Page - Diodes Incorporated  
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Electrical Characteristics
@TA = 25°C unless otherwise specified
R1, R2 Types
DS30404 Rev. 6 - 2
2 of 3
www.diodes.com
DDTC (LO-R1) E
© Diodes Incorporated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DDTC122LE
DDTC142JE
Vl(off)
0.3
0.3
⎯
⎯
V
VCC = 5V, IO = 100μA
Input Voltage
DDTC122LE
DDTC142JE
Vl(on)
⎯
⎯
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
⎯
⎯
0.3V
V
IO/Il = 5mA/0.25mA
Input Current
DDTC122LE
DDTC142JE
Il
⎯
⎯
28
13
mA VI = 5V
Output Current
IO(off)
⎯
⎯
0.5
μA VCC = 50V, VI = 0V
DC Current Gain
DDTC122LE
DDTC142JE
Gl
56
56
⎯
⎯
⎯
VO = 5V, IO = 10mA
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
@TA = 25°C unless otherwise specified
R1-Only Types
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
40
⎯
⎯
V
IC = 1mA
Emitter-Base Breakdown Voltage
DDTC122TE
DDTC142TE
BVEBO
5
⎯
⎯
V
IE = 50μA
IE = 50μA
Collector Cutoff Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V
Emitter Cutoff Current
DDTC122TE
DDTC142TE
IEBO
⎯
⎯
⎯
0.5
0.5
μA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
IC = 5mA, IB = 0.25mA
DC Current Transfer Ratio
DDTC122TE
DDTC142TE
hFE
100
100
250
250
600
600
⎯
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
-50
050
100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
150



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