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DA2DF62 数据表(PDF) 1 Page - Panasonic Semiconductor |
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DA2DF62 数据表(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() Note: 1. *1 50 Hz sine wave 1cycle(Non-repetitive peak current) Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and outpot is 10 MHz 3. *1 R-load trr test circuit Magagine 50 pcs Forward voltage VF Electrical Characteristics Ta = 25 °C±3 °C Parameter Symbol Conditions IF = 0.5 A, VR = 1.0 A IRRM Semiconductor Company, Panasonic Corporation 2009.10.28 2010.8.31 Prepared Revised Tentative DA2DF62 Total pages page Non-repetitive peak peak reverse voltage VRSM 600 V Repetitive peak reverse voltage VRRM 600 V Forward current DA2DF62 Silicon epitaxial planar type For high frequency rectification Marking Symbol : DA2DF62 Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit A IF(AV) 10 Ta = 25 °C °C Junction temperature Tj Storage temperature Tstg to +150 Themal resistance Themal resistance Rth(j-c) Rth(j-a) μA Reverse current 10 VRRM = 600 V V IF = 10 A 1.4 1.7 °C / W 150 4.0 63 °C Min IFSM 40 A °C / W Typ Max 25 40 Unit Packing ns trr Package Code : TO-220D-B1 Irr = 0.25 A -40 Reverse recovery time *1 Non-repetitive peak forward surge current * |
类似零件编号 - DA2DF62 |
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类似说明 - DA2DF62 |
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