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DMN2005LP4K 数据表(PDF) 1 Page - Diodes Incorporated |
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DMN2005LP4K 数据表(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page ![]() DMN2005LP4K Document number: DS30799 Rev. 4 - 2 1 of 4 www.diodes.com March 2009 © Diodes Incorporated DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • "Green" Device (Note 4) • ESD Protected Gate • Ultra Low Profile Package • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: DFN1006H4-3 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.001 grams Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Drain Current per element (Note 1) Continuous Pulsed (Note 3) ID 200 250 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DFN1006H4-3 Pin Out Configuration TOP VIEW BOTTOM VIEW ESD protected Source Body Diode EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain D S G Please click here to visit our online spice models database. |
类似零件编号 - DMN2005LP4K |
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类似说明 - DMN2005LP4K |
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