BC856AS datasheet(1/3 Pages) DIODES

部件名	BC856AS

功能描述	DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

1 / 3 page

DS30834 Rev. 7 - 2

1 of 3

www.diodes.com

BC856AS

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

•

Ideally Suited for Automatic Insertion

•

For Switching and AF Amplifier Applications

•

Complementary NPN Types Available (BC846AS)

•

Lead Free/RoHS Compliant (Note 1)

•

"Green" Device (Note 4 and 5)

Mechanical Data

•

Case: SOT-363

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Pin Connections: See Diagram

•

Marking Codes: See Page 3

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.006 grams (approximate)

SOT-363

Dim

Min

Max

A

0.10

0.30

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

F

0.30

0.40

H

1.80

2.20

J

⎯

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

α

0

°

8°

All Dimensions in mm

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-65

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-100

mA

Peak Collector Current

ICM

-200

mA

Peak Emitter Current

IEM

-200

mA

Power Dissipation

(Note 2)

Pd

200

mW

Thermal Resistance, Junction to Ambient

(Note 2)

RθJA

625

°C/W

Operating and Storage Temperature Range

Tj, Tstg

-65 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

(Note 3)

V(BR)CBO

-80

—

V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage

(Note 3)

V(BR)CEO

-65

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

(Note 3)

V(BR)EBO

-5

—

V

IE = 1μA, IC = 0

DC Current Gain

(Note 3)

hFE

125

180

250

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage

(Note 3)

VCE(SAT)

—

-75

-250

-300

-650

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage

(Note 3)

VBE(SAT)

—

-700

-850

—

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage

(Note 3)

VBE(ON)

-600

—

-650

—

-750

-820

mV

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current

(Note 3)

ICES

ICBO

—

-15

-4.0

nA

µA

VCE = -80V

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance

CCB

—

3

—

pF

VCB = -10V, f = 1.0MHz

Notes:

1.

No purposefully added lead.

2.

Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

3.

Short duration pulse test used to minimize self-heating effect.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5.

Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

C

1

65

4

3

2

1

B

2

E

2

E

1

B

1

C

2

A

M

J

L

D

C

B

H

K

F

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