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DMC2004LPK 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMC2004LPK
功能描述  COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMC2004LPK 数据表(HTML) 2 Page - Diodes Incorporated

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DMC2004LPK
Electrical Characteristics N-CHANNEL – Q1 @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
± 1
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.5
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
0.4
0.5
0.7
0.55
0.70
0.90
Ω
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
⎯
⎯
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 4)
VSD
0.5
⎯
1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
150
pF
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
20
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q2 @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
-20
⎯
⎯
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1.0
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
± 1.0
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
-0.5
⎯
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance
|Yfs|
200
⎯
⎯
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 4)
VSD
-0.5
⎯
-1.2
V
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
175
pF
Output Capacitance
Coss
⎯
⎯
30
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
20
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Q1, N-CHANNEL
0
0
V
, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
2 of 7
www.diodes.com
September 2007
© Diodes Incorporated



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