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DMN2004DMK 数据表(PDF) 1 Page - Diodes Incorporated |
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DMN2004DMK 数据表(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN2004DMK Document number: DS30937 Rev. 3 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2KV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.015 grams (approximate) SOT-26 S 1 D 1 D 2 S 2 G 1 G 2 ESD protected up 2kV TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID 540 390 mA Pulsed Drain Current (Note 3) IDM 1.5 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) Pd 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±1 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.5 ⎯ 1.0 V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4 0.5 0.7 0.55 0.70 0.9 Ω VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 150 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF VDS = 16V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. |
类似零件编号 - DMN2004DMK |
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类似说明 - DMN2004DMK |
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