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DMN3033LSN 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMN3033LSN
功能描述  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  5 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMN3033LSN 数据表(HTML) 2 Page - Diodes Incorporated

  DMN3033LSN Datasheet HTML 1Page - Diodes Incorporated DMN3033LSN Datasheet HTML 2Page - Diodes Incorporated DMN3033LSN Datasheet HTML 3Page - Diodes Incorporated DMN3033LSN Datasheet HTML 4Page - Diodes Incorporated DMN3033LSN Datasheet HTML 5Page - Diodes Incorporated  
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DMN3033LSN
Document number: DS31116 Rev. 5 - 2
2 of 5
www.diodes.com
January 2010
© Diodes Incorporated
DMN3033LSN
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
TJ = 25°C
TJ = 55°C
IDSS
⎯
⎯
1
5
μA
VDS = 30V, VGS = 0V
Gate-Body Leakage Current
IGSS
⎯
⎯
±100
nA
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VGS(th)
1.0
⎯
2.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
⎯
25
36
30
40
m
Ω
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
Forward Transconductance (Note 5)
gFS
⎯
5
⎯
S
VDS = 10V, ID = 8A
Diode Forward Voltage (Note 5)
VSD
⎯
0.7
1.1
V
IS = 2.25A, VGS = 0V
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Qg
⎯
10.5
⎯
nC
VGS = 5V, VDS = 15V, ID = 6A
Gate-Source Charge
Qgs
⎯
3.8
⎯
nC
VGS = 10V, VDS = 15V, ID = 6A
Gate-Drain Charge
Qgd
⎯
2.9
⎯
nC
VGS = 10V, VDS = 15V, ID = 6A
Turn-On Delay Time
tD(on)
⎯
11
⎯
ns
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
Turn-On Rise Time
tr
⎯
7
⎯
ns
Turn-Off Delay Time
tD(off)
⎯
63
⎯
ns
Turn-Off Fall Time
tf
⎯
30
⎯
ns
Input Capacitance
Ciss
⎯
755
⎯
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
136
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
108
⎯
pF
Notes:
5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
0
2
4
6
8
10
12
14
16
18
20
01
2
3
4
V
= 5V
Pulsed
DS



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