2DB1132P datasheet(1/4 Pages) DIODES

部件名	2DB1132P

功能描述	PNP SURFACE MOUNT TRANSISTOR

PDF	4 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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1 / 4 page

2DB1132P/Q/R

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Type Available (2DD1664)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT89-3L

•

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking & Type Code Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.072 grams (approximate)

SOT89-3L

3

1

2,4

COLLECTOR

EMITTER

BASE

4

3

2

1

C

B

E

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-32

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3) @ TA = 25°C

PD

1

W

Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C

RθJA

125

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-40

⎯

V

IC = -50μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-32

⎯

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

⎯

V

IE = -50μA, IC = 0

Collector Cut-Off Current

ICBO

⎯

-0.5

μA

VCB = -20V, IE = 0

Emitter Cut-Off Current

IEBO

⎯

-0.5

μA

VEB = -4V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.125

-0.5

V

IC = -500mA, IB = -50mA

82

⎯

180

⎯

120

⎯

270

⎯

DC Current Gain

2DB1132P

2DB1132Q

2DB1132R

hFE

180

⎯

390

⎯

VCE = -3V, IC = -100mA

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

fT

⎯

190

⎯

MHz

VCE = -5V, IE = 50mA

f = 30MHz

Output Capacitance

Cob

⎯

12

30

pF

VCB = -10V, IE = 0,

f = 1MHz

Notes:

1.

No purposefully added lead.

2.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3.

Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

4.

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

DS31142 Rev. 4 - 2

1 of 4

www.diodes.com

2DB1132P/Q/R

类似零件编号 - 2DB1132P

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