DXT751 datasheet(2/4 Pages) DIODES

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-80

⎯

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-60

⎯

IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

⎯

IE = -100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

-0.1

-10

μA

VCB = -60V, IE = 0

VCB = -60V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

⎯

-0.1

μA

VEB = -4V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.08

-0.2

-0.3

-0.6

IC = -1A, IB = -100mA

IC = -3A, IB = -300mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-0.9

-1.25

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-0.8

-1

VCE = -2V, IC = -1A

DC Current Gain

hFE

100

200

180

160

140

⎯

300

⎯

VCE = -2V, IC = -50mA

VCE = -2V, IC = -500mA

VCE = -2V, IC = -1A

VCE = -2V, IC = -2A

AC CHARACTERISTICS

Transition Frequency

100

145

⎯

MHz

VCE = -10V, IC = -50mA, f = 100MHz

Output Capacitance

Cobo

⎯

VCB = -10V, f = 1MHz

Switching Times

ton

toff

⎯

200

⎯

IC = -500mA, VCC = -10V

IB1 = IB2 = -50mA

Notes:

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

0.2

0.4

0.6

0.8

1.0

100

125

150

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation

vs. Ambient Temperature (Note 3)

-V

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

DS31185 Rev. 3 - 2

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