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DMB2227A-7 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMB2227A-7
功能描述  COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMB2227A-7 数据表(HTML) 2 Page - Diodes Incorporated

  DMB2227A-7 Datasheet HTML 1Page - Diodes Incorporated DMB2227A-7 Datasheet HTML 2Page - Diodes Incorporated DMB2227A-7 Datasheet HTML 3Page - Diodes Incorporated DMB2227A-7 Datasheet HTML 4Page - Diodes Incorporated DMB2227A-7 Datasheet HTML 5Page - Diodes Incorporated DMB2227A-7 Datasheet HTML 6Page - Diodes Incorporated  
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DS31217 Rev. 4 - 2
2 of 6
www.diodes.com
DMB2227A
© Diodes Incorporated
Electrical Characteristics: 2222A Type (NPN) @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICBO
10
nA
μA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
35
50
75
100
40
50
35
300
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
Rise Time
tr
25
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Storage Time
ts
225
ns
Fall Time
tf
60
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Notes:
4.
Pulse test: pulse width
≤300μS, duty cycle ≤2%.



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