DPLS350E datasheet(2/5 Pages) DIODES

2 / 5 page

DPLS350E

Document number: DS31230 Rev. 4 - 2

2 of 5

www.diodes.com

April 2009

DPLS350E

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Cutoff Current

ICBO

⎯

-100

VCB = -50V, IE = 0

⎯

-50

μA

VCB = -50V, IE = 0, TA = 150°C

Emitter-Base Cutoff Current

IEBO

⎯

-100

VEB = -5V, IC = 0

Collector-Base Breakdown Voltage

V(BR)CBO

-50

⎯

IC = -100μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

-50

⎯

IC = -10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

⎯

IE = -100μA

ON CHARACTERISTICS (Note 4)

DC Current Gain

hFE

200

⎯

VCE = -2V, IC = -0.5A

200

⎯

VCE = -2V, IC = -1A

100

⎯

VCE = -2V, IC = -2A

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-100

IC = -0.5A, IB = -50mA

⎯

-180

IC = -1A, IB = -50mA

⎯

-300

IC = -2A, IB = -200mA

Equivalent On-Resistance

RCE(SAT)

⎯

150

Ω IE = -2A, IB = -200mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.2

IC = -2A, IB = -200mA

Base-Emitter Turn-on Voltage

VBE(ON)

⎯

-1.1

VCE = -2V, IC = -1A

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

100

⎯

MHz

VCE = -5V, IC = -100mA,

f = 100MHz

Output Capacitance

Cobo

⎯

VCB = -10V, f = 1MHz

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

-V

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage

I = -2mA

I = -4mA

I = -6mA

I = -8mA

I = -10mA

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