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DPLS160V 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DPLS160V
功能描述  LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DPLS160V 数据表(HTML) 2 Page - Diodes Incorporated

  DPLS160V Datasheet HTML 1Page - Diodes Incorporated DPLS160V Datasheet HTML 2Page - Diodes Incorporated DPLS160V Datasheet HTML 3Page - Diodes Incorporated DPLS160V Datasheet HTML 4Page - Diodes Incorporated  
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
-80
V(BR)CBO
⎯
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
⎯
⎯
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
⎯
⎯
V
IE = -100μA, IC = 0
Collector Cutoff Current
ICBO
DS31251 Rev. 3 - 2
2 of 4
www.diodes.com
DPLS160V
© Diodes Incorporated
⎯
⎯
-100
-50
nA
μA
VCB = -60V, IE = 0
VCB = -60V, IE = 0, TA = 150°C
Collector Cutoff Current
ICES
⎯
⎯
-100
nA
VCE = -60V, VBE = 0
Emitter Cutoff Current
IEBO
⎯
⎯
-100
nA
VEB = -5V, IC = 0
ON CHARACTERISTICS (Note 4)
200
150
100
DC Current Gain
hFE
325
250
180
⎯
⎯
⎯
V
VCE = -5V, IC = -1mA
VCE = -5V, IC = -500mA
VCE = -5V, IC = -1A
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
-90
-90
-160
-160
-175
-330
mV
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
Collector-Emitter Saturation Resistance
RCE(SAT)
⎯
160
330
m
Ω
IC = -1A, IB = -100mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-0.95
-1.1
V
IC = -1A, IB = -50mA
Base-Emitter Turn On Voltage
VBE(ON)
⎯
-0.82
-0.9
V
VCE = -5V, IC = -1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
10
15
pF
VCB = -10V, f = 1.0MHz
Current Gain-Bandwidth Product
fT
150
220
⎯
MHz
VCE = -10V, IC = -50mA, f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
ton
⎯
36
⎯
ns
Delay Time
td
⎯
12
⎯
ns
Rise Time
tr
⎯
24
⎯
ns
Turn-Off Time
toff
⎯
163
⎯
ns
Storage Time
ts
⎯
132
⎯
ns
Fall Time
tf
⎯
31
⎯
ns
VCC = -10V
IC = -0.5A, IB1 = IB2 = -25mA
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.3
0.6
0.9
1.2
1.5
0
123
4
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
0
50
100
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
400
0
5
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B



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