DMN3033LSD

Document number: DS31262 Rev. 7 - 2

3 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN3033LSD

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN CURRENT (A)

D

0.01

0.1

0.1

1

10

V

= 10V

GS

V

= 4.5V

GS

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

0.01

0.1

02

4

6

8

10

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

V

= 4.5V

I = 5A

GS

D

V

= 10V

I = 6.9A

GS

D

Fig. 6 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

10,000

0

5

10

15

20

25

30

f = 1MHz

C

iss

0

2

4

6

8

10

02

4

6

8

10

12

14

Q - TOTAL GATE CHARGE (nC)

Fig. 7 Gate Charge

g

I = 7A

D

I = 9A

D

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

1

1.3

1.6

1.9

2.2

2.5

I = 250µA

D